Magnetoresistance Switch Effect of a Sn-Doped Bi2Te3 Topological Insulator

作者：Zhang, Hong Bin; Yu, Hai Lin; Bao, Ding Hua; Li, Shu Wei; Wang, Cheng Xin; Yang, Guo Wei^*

来源：Advanced Materials, 2012, 24(1): 132-+.

DOI：10.1002/adma.201103530

• topological insulators
• mangetoresistance
• switch effects

A reproducible and steady magnetoresistance switch effect of Sn-doped Bi(2)Te(3) topological insulator films with a Pt/Sndoped Bi(2)Te(3)/Pt structure is observed when a parallel magnetic field is applied.

• 出版日期2012-1
• 单位中山大学