A novel delta-doped partially insulated dopant-segregated Schottky barrier SOI MOSFET for analog/RF applications

作者：Patil Ganesh C^*; Qureshi S

来源：Semiconductor Science and Technology, 2011, 26(8): 085002.

DOI：10.1088/0268-1242/26/8/085002

In this paper, a comparative analysis of single-gate dopant-segregated Schottky barrier (DSSB) SOI MOSFET and raised source/drain ultrathin-body SOI MOSFET (RSD UTB) has been carried out to explore the thermal efficiency, scalability and analog/RF performance of these devices. A novel p-type delta-doped partially insulated DSSB SOI MOSFET (DSSB Pi-OX-delta) has been proposed to reduce the self-heating effect and to improve the high-frequency performance of DSSB SOI MOSFET over RSD UTB. The improved analog/RF figures of merit such as transconductance, transconductance generation factor, unity-gain frequency, maximum oscillation frequency, short-circuit current gain and unilateral power gain in DSSB Pi-OX-delta MOSFET show the suitability of this device for analog/RF applications. The reduced drain-induced barrier lowering, subthreshold swing and parasitic capacitances also make this device highly scalable. By using mixed-mode simulation capability of MEDICI simulator a cascode amplifier has been implemented using all the structures (RSD UTB, DSSB SOI and DSSB Pi-OX-delta MOSFETs). The results of this implementation show that the gain-bandwidth product in the case of DSSB Pi-OX-delta MOSFET has improved by 50% as compared to RSD UTB and by 20% as compared to DSSB SOI MOSFET. The detailed fabrication flow of DSSB Pi-OX-delta MOSFET has been proposed which shows that with the bare minimum of steps the performance of DSSB SOI MOSFET can be improved significantly in comparison to RSD UTB.

• 出版日期2011-8