Post-selenization of stacked precursor layers for CIGS

作者：Baji Zs^*; Labadi Z; Molnar Gy; Pecz B; Toth A L; Toth J; Csik A; Barsony I

来源：Vacuum, 2013, 92: 44-51.

DOI：10.1016/j.vacuum.2012.11.012

• CIGS
• Selenization
• Stacked precursors
• Precursor morphology

In this study the possibility of the fabrication of CIGS layers from stacked precursors with selenization is examined. Different sequences of precursor layers and two different selenization methods were applied, in order to establish the optimal order of Cu, In and Ga layers in the precursor layer stack. The obtained CIGS films were studied by different micro- and surface analysis methods (TEM, SEM, EDS, XRD, SNMS, XPS). Since the evaporation of a Se layer and post-annealing does not result in a homogeneous CIGS layer, the appropriate selenization must be accomplished in Se-vapour.

• 出版日期2013-6