科研之友
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摘要
A method to extend the cutoff wavelength of mid-infrared barrier photodetectors by incorporating self-assembled InSb quantum dots into the active area of the detector is demonstrated. This approach enables the extension of the cutoff wavelength of barrier photodetectors from 4.2 to 6 mu m, demonstrating infrared response at temperatures up to 225 K.
- 出版日期2010-9-2
