A Highly Linear Low Noise Amplifier With Wide Range Derivative Superposition Method

作者：Gao, Wei; Chen, Zhiming^*; Liu, Zicheng; Cui, Wei; Gui, Xiaoyan

来源：IEEE Microwave and Wireless Components Letters, 2015, 25(12): 817-819.

DOI：10.1109/LMWC.2015.2496793

• CMOS
• high linearity
• IMD3
• large-signal nonlinearity
• low noise amplifier (LNA)
• third-order derivative cancellation

This letter presents an L-band highly linear differential low noise amplifier (LNA) in a standard 90-nm CMOS process. A wide range derivative superposition technique is proposed to maximize the third-order intercept point (IP3), and at the same time, minimize the third-order intermodulation distortion (IMD3) over a wide input power range. The LNA chip achieves a measured OIP3 of +33.7 dBM and IMD3 of -65 dBc with -15 dBM input power. The measured peak gain and minimum noise figure are 15.4 dB and 1.36 dB at 1.27 GHz, respectively. The LNA chip consumes 40 mA from a 3.3-V supply.

• 出版日期2015-12
• 单位北京理工大学