摘要
Using wafer bonding (WB) and wet oxidation (WO) techniques, GaInP microdisks having an asymmetric waveguide (diameters D = 1-3 mu m) with embedded InP quantum dots (size/density similar to 100 nm/similar to 10(9) cm(-2)) have been fabricated on Si and GaAs Substrates, respectively. The TE(m,l) (m = 28-12, l = 1.2) and TM(m,l) (m = 25-10, l = 1-4) whispering gallery modes with quality factors Q similar to 2-5 x 103 have been identified in photoluminescence spectra of these microdisks (MDs) in the spectral range 720-770 nm. Lasing thresholds of 6 (30) mu W and mode Coupling constants 0.9 (0.7) have been demonstrated for WO (WB) MDs.
- 出版日期2009-3-16