Novel Quaternary Dilute Magnetic Semiconductor (Ga,Mn)(Bi,As): Magnetic and Magneto-Transport Investigations

作者：Levchenko K^*; Andrearczyk T; Domagala J Z; Sadowski J; Kowalczyk L; Szot M; Kuna R; Figielski T; Wosinski T

来源：Journal of Superconductivity and Novel Magnetism, 2017, 30(3): 825-829.

DOI：10.1007/s10948-016-3752-3

• Magnetic semiconductors
• Thin films
• Raman spectroscopy
• Magneto-optical Kerr effect
• Magneto-resistance
• Planar Hall effect

Magnetic and magneto-transport properties of thin layers of the (Ga,Mn)(Bi,As) quaternary dilute magnetic semiconductor grown by the low-temperature molecular-beam epitaxy technique on GaAs substrates have been investigated. Ferromagnetic Curie temperature and magneto-crystalline anisotropy of the layers have been examined by using magneto-optical Kerr effect magnetometry and low-temperature magneto-transport measurements. Post-growth annealing treatment of the layers has been shown to enhance the hole concentration and Curie temperature in the layers. A significant increase in the magnitude of magneto-transport effects caused by incorporation of a small amount of Bi into the (Ga,Mn)As layers, revealed in the planar Hall effect (PHE) measurements, is interpreted as a result of enhanced spin-orbit coupling in the (Ga,Mn)(Bi,As) layers. A two-state behaviour of the planar Hall resistance at zero magnetic field provides its usefulness for applications in non-volatile memory devices.

• 出版日期2017-3