Analytical model for the piecewise linearly graded doping drift region in LDMOS

作者：Sun Weifeng^*; Yi Yangbo; Lu Shengli; Shi Longxing

来源：Pan Tao Ti Hsueh Pao/chinese Journal of Semiconductors, 2006, 27(6): 976-981.

• Breakdown voltage
• Doping profile
• Lateral double diffused MOS (LDMOS)
• Piecewise linearly graded doping drift region
• Reduced surface field (RESURF)
• Specific on resistance

A novel 2D analytical model for the doping profile of the bulk silicon RESURF LDMOS drift region is proposed. According to the proposed model, to obtain good performance, the doping profile in the total drift region of a RESURF LDMOS with a field plate should be piecewise linearly graded. The breakdown voltage of the proposed RESURF LDMOS with a piecewise linearly graded doping drift region is improved by 58.8%, and the specific on-resistance is reduced by 87.4% compared with conventional LDMOS. These results are verified by the two-dimensional process simulator Tsuprem-4 and the device simulator Medici.

• 出版日期2006
• 单位东南大学