Post-complementary metal-oxide-semiconductor vertical and molecular transistors: A platform for molecular electronics

作者：Mentovich Elad D^*; Richter Shachar

来源：Applied Physics Letters, 2011, 99(3): 033108.

DOI：10.1063/1.3612913

We demonstrate two types of post-complementary vertical-metal-insulator tunneling transistor in which a self-assembled monolayer is coupled to the channel of one of them. It is found that the properties of the molecular device are better than those of similar transistors in which these molecules are absent. The molecular transistor exhibits higher currents than the non-molecular device and shows negligible leakage currents, with clear features which are attributed to the properties of the molecules.

• 出版日期2011-7-18