A 1.95 GHz Sub-1 dB NF,+40 dBm OIP3 WCDMA LNA Module

作者：Bergervoet Jos^*; Leenaerts Domine M W; de Jong Gerben W; van der Heijden Edwin; Lobeek Jan Willem; Simin Alexander

来源：IEEE Journal of Solid-State Circuits, 2012, 47(7): 1672-1680.

DOI：10.1109/JSSC.2012.2191673

• BiCMOS
• cellular
• low noise amplifier
• RF attenuator
• RF IC design

A silicon integrated LNA for WCDMA cellular infrastructure applications, e. g., base stations will be demonstrated. The LNA is designed for WCDMA band II, i. e., 1.92-1.98 GHz, and reaches a 0.9 dB NF at 27 C and 1.2 dB at 65 C. A 0.1 dB NF improvement is obtained when the first gain stage is implemented using a cascode topology rather than a two-stage topology. The output IP3 is 40 dBm (38 dBm) at 27 C and 37 dBm (36 dBm) at 65 C for the two-stage (cascode) topology. Both options have an input return loss better than 20 dB and output return loss better than 20 dB. A bypassmode and variable attenuation are provided to cope with large input signals. Implemented in a SiGe: C BiCMOS technology, the two-die MMIC is packaged on a single laminate. The total solution consumes just below 200 mA from a 5 V supply.

• 出版日期2012-7