Competition between instabilities of Peierls transition and Mott transition in W-doped VO2 thin films

作者:Sakai Enju*; Yoshimatsu Kohei; Shibuya Keisuke; Kumigashira Hiroshi; Ikenaga Eiji; Kawasaki Masashi; Tokura Yoshinori; Oshima Masaharu
来源:Physical Review B, 2011, 84(19): 195132.
DOI:10.1103/PhysRevB.84.195132

摘要

The change in electronic structure of V1-xWxO2 thin films across a metal-insulator transition (MIT) is investigated in terms of hard x-ray photoemission spectroscopy and x-ray absorption spectroscopy. In the lower doping range (0 <= x <= 0.08), the spectra exhibit the characteristic features for the dimerization of V ions in the monoclinic phase, indicating that Peierls-like instability predominately causes the MIT in this range. Conversely, in the higher doping range (0.1 <= x), spectral weight transfer is observed from the coherent part at the Fermi level to the incoherent part, indicating that the ground state of V1-xWxO2 films in this range is a typical Mott insulator. The results suggest that the unusual phase diagram of the V1-xWxO2 thin films originates from the competition between the Peierls and Mott instabilities.

  • 出版日期2011-11-28