Modification of deposition process for Cu(In, Ga)Se_2 thin film solar cells on polyimide substrate at low temperature

作者：XIN Zhi jun CHEN Xi ming QIAO Zai xiang WANG He XUE Yu ming PAN Zhen and TIAN Yuan Tianjin Key Laboratory of Film Electronic & Communication Devices School of Electronics Information Engineering Tianjin University of Technology Tianjin China National Key Laboratory of Power Sources Tianjin Institute of Power Sources Tianjin China School of Mater Sci & Eng Hebei University of Technology Tianjin China

来源：Optoelectronics Letters, 2013, (02): 112-115.

• CIGS
• absorber
• evaporation
• disappear
• Modification
• fabricate
• recombination
• instead
• photovoltaic
• attributed

We fabricate polycrystalline Cu(In, Ga)Se2 (CIGS) film solar cells on polyimide (PI) substrate at temperature of 450 °C with single-stage process, and obtain a poor crystallization of CIGS films with several secondary phases in it. For improving it further, the two-stage process is adopted instead of the single-stage one. An extra Cu-rich CIGS layer with the thickness from 100 nm to 200 nm is grown on the substrate, and then another Cu-poor CIGS film with thickness of 1.5-2.0 μm is deposited on it. With the modification of the evaporation process, the grain size of absorber layer is increased, and the additional secondary phases almost disappear. Accordingly, the overall device performance is improved, and the conversion efficiency is enhanced by about 20%.

• 出版日期2013-3-1
• 单位天津大学