Uniform graphene on liquid metal by chemical vapour deposition at reduced temperature

作者:Wang, Jiao; Chen, Linfeng; Wu, Nian; Kong, Zhizhi; Zeng, Mengqi; Zhang, Tao; Zhuang, Lin; Fu, Lei*
来源:Carbon, 2016, 96: 799-804.
DOI:10.1016/j.carbon.2015.10.015

摘要

Liquid metal, such as Ga, has been demonstrated to be a good catalyst to grow uniform graphene at about 1000 degrees C. However, at reduced temperature, the high surface tension of Ga causes the limited spreading-ability over the supporting substrate, which prevents the formation of large-area graphene. Here we present that the addition of Cu could efficiently decrease the surface tension of Ga, thus achieving a larger coverage. We succeeded in growing large-area, uniform and single-layer graphene at 800 degrees C by atmospheric chemical vapour deposition using CH4 as the carbon source.