Memristive devices as parameter setting elements in programmable gain amplifiers

作者：Berdan R^*; Prodromakis T; Salaoru I; Khiat A; Toumazou C

来源：Applied Physics Letters, 2012, 101(24): 243502.

DOI：10.1063/1.4770315

In this paper, we investigate the AC performance of a variable gain amplifier that utilizes an in-house manufactured memristor as a gain setting element. Analysis includes frequency and phase responses as the memristor is programmed at different resistive states. A TiO2-based solid-state memristor was employed in the feedback branch of an inverting voltage amplifier and was programmed externally. We have also observed indications of memcapacitive effects and a correlation with resistive states is presented. We demonstrate that our TiO2 memristive devices, although possessing relatively low R-OFF/R-ON switching ratios (similar to 10), are versatile and can be used reliably in programmable gain amplifiers.

• 出版日期2012-12-10