Magnetoelectric Flexural Gate Transistor With Nanotesla Sensitivity

作者：Li Feng^*; Misra Rajiv; Fang Zhao; Wu Yufei; Schiffer Peter; Zhang Qiming; Tadigadapa Srinivas; Datta Suman

来源：Journal of Microelectromechanical Systems, 2013, 22(1): 71-79.

DOI：10.1109/JMEMS.2012.2215012

• Magnetoelectric (ME)
• magnetostriction
• ME flexural gate transistor (MEFGT)
• Metglas (Fe0.85B0.05Si0.1) thin films
• microelectromechanical systems (MEMS)

Magnetic sensors capable of detecting tiny ac magnetic fields ranging from microtesla to picotesla are of great interest. In this paper, we demonstrate an integrated magneto-electric (ME) flexural gate transistor with nanotesla magnetic field detection sensitivity at room temperature. The device capacitively couples a Metglas (Fe0.85B0.05Si0.1)-based magnetostrictive unimorph micromechanical cantilever beam to the gate of an n-channel field-effect transistor. Using this sensor configuration, a sensitivity of 0.23 mV/mu T and a minimum detectable field of 60 nT/root Hz at 1 Hz and 1.5 mV/mu T and 150 pT/root Hz at the flexural resonance of the cantilever structure of 4.9 kHz were obtained. The results demonstrate a significant improvement in the thin-film ME sensor integration with standard CMOS process and open the possibility of monolithic magnetic sensor arrays fabrication for biomedical imaging applications.

• 出版日期2013-2