High-temperature modeling of AlGaN/GaN HEMTs

作者：Vitanov S^*; Palankovski V; Maroldt S; Quay R

来源：Solid-State Electronics, 2010, 54(10): 1105-1112.

DOI：10.1016/j.sse.2010.05.026

• AlGaN/GaN
• HEMT
• High-temperature
• Modeling
• Simulation

Wide bandgap, high saturation velocity, and high thermal stability are some of the properties of GaN, which make it an excellent material for high-power, high-frequency, and high-temperature applications. As several application areas require the devices to operate at elevated temperatures, a proper modeling of the temperature dependences of the band structure and transport parameters is very important. We present two-dimensional hydrodynamic simulations of AlGaN/GaN high electron mobility transistors (HEMTs) at high temperatures. The simulator is calibrated against measurement data of a real device and delivers good predictive results for the DC and RF characteristics of another. The temperature dependence of the maximum current and cut-off frequency of submicron devices is further studied.

• 出版日期2010-10