A larger nonvolatile bipolar resistive switching memory behaviour fabricated using eggshells

作者：Zhou, Guangdong; Sun, Bai; Zhou, Ankun; Wu, Bo^*; Huang, Haishen

来源：Current Applied Physics, 2017, 17(2): 235-239.

DOI：10.1016/j.cap.2016.09.018

• Resistive switching memory
• Eggshell dielectric films
• Redox-based filaments

Resistive random access memory (RRAM) devices have emerged as promising candidates for near future nonvolatile information storage. Eggshells, a food waste, have not been focused and recycled sustainably today. Eggshell-based devices have shown a large resistive-switching(RS) memory behaviors with favorable resistance ratio of similar to 10(3), larger memory window of similar to 3.5 V, and high endurance and retention performance. Redox-based Ag filament models involving the formation and rupture of the metallic conduction filaments between top and bottom electrodes are proposed to interpret the large nonvolatile bipolar RS memory behaviors. This discovery provides for the possibility of an environmentally friendly, low-cost and sustainable material application in the next-generation nonvolatile date storage device.

• 出版日期2017-2
• 单位遵义师范学院; 中国科学院昆明植物研究所; 西南交通大学