High-Speed GaN/GaInN Nanowire Array Light-Emitting Diode on Silicon(111)

作者：Koester Robert; Sager Daniel; Quitsch Wolf Alexander; Pfingsten Oliver; Poloczek Artur^*; Blumenthal Sarah; Keller Gregor; Prost Werner; Bacher Gerd; Tegude Franz Josef

来源：Nano Letters, 2015, 15(4): 2318-2323.

DOI：10.1021/nl504447j

• GaInN/GaN
• nanowire
• LED
• high frequency operation
• photoluminescence
• electroluminescence

The high speed on-off performance of GaN-based light-emitting diodes (LEDs) grown in c-plane direction is limited by long carrier lifetimes caused by spontaneous and piezoelectric polarization. This work demonstrates that this limitation can be overcome by m-planar core-shell InGaN/GaN nanowire LEDs grown on Si(111). Time-resolved electroluminescence studies exhibit 90-10% rise- and fall-times of about 220 ps under GHz electrical excitation. The data underline the potential of these devices for optical data communication in polymer fibers and free space.

• 出版日期2015-4