AR-HPES study on chemical bonding states of high-kappa/high-mu gate stacks for advanced CMOS

作者：Nohira H^*; Komatsu A; Yamashita K; Kakushima K; Iwai H; Sawano K; Shiraki Y

来源：Journal of Electron Spectroscopy and Related Phenomena, 2013, 190: 295-301.

DOI：10.1016/j.elspec.2013.06.010

• Photoelectron spectroscopy
• High-kappa
• Semiconductor
• Interface

Hard X-ray photoemission spectroscopy experiments are attractive because they can probe more deeply. The paper reviews two topics on the non-destructive characterization of high-kappa/high-mu gate stacks using hard X-ray (hv= 7.94 key) photoemission spectroscopy. The first topic is the change in the compositional depth profiles and the chemical bonding states of HfO2/Si-cap/strained-Ge/Si0.3Ge0.5/Si(1 0 0) laminating structures. The second topic is the influence of various surface treatments (HF, (NH4)(2)S and HMDS treatments) and La2O3 interlayer insertion on the chemical bonding states at high-kappa/In(0.53)Gao.47As interface. 2013 Published by Elsevier B.V.

• 出版日期2013-10