An EPR investigation of SiOx films with columnar structure

作者：Bratus' V^*; Indutnyi I; Shepeliavyi P; Torchynska T

来源：Physica B: Condensed Matter , 2014, 453: 26-28.

DOI：10.1016/j.physb.2013.11.060

• Porous SiOx films
• Paramagnetic defects
• EPR
• EX center

The results of electron paramagnetic resonance (ERR) study of obliquely deposited porous SiOx films before and after thermal annealing in vacuum at 950 degrees C are presented. The low intensity slightly asymmetrical and featureless ERR line with a g-value of 2.0044 and a linewidth of 0.77 mT has been detected in as-sputtered films and attributed to dangling bonds of silicon atoms in amorphous SiOx domains with x=0.8. Successive annealing results in decreasing this line and the appearance of an intense ERR line with g=2.0025, linewidth of 0.11 mT and a hyperfine doublet with 1.6 mT splitting. According to the parameters this spectrum has been attributed to the EX center, a hole delocalized over Foul non-bridging oxygen atoms grouped around a Si vacancy in SiO2. The impact of chemical treatment before annealing and duration of anneals on the detect system is discussed.

• 出版日期2014-11-15