Novel Gallium Complexes with Malonic Diester Anions as Molecular Precursors for the MOCVD of Ga2O3 Thin Films

作者：Hellwig Malte; Xu Ke; Barreca Davide; Gasparotto Alberto; Winter Manuela; Tondello Eugenio; Fischer Roland A; Devi Anjana^*

来源：European Journal of Inorganic Chemistry, 2009, 2009(8): 1110-1117.

DOI：10.1002/ejic.200801062

• Gallium
• Chemical vapor deposition
• Thin films
• Oxides
• O ligands

Five different homoleptic gallium complexes with malonic diester anions [Ga(ROCOCHOCOR)(3)] [R = Me (1), Et (2), iPr (3), tBu (4) and SiMe3 (5)] have been synthesised and characterised by H-1 and C-13 NMR, IR spectroscopy, electron ionisation mass spectrometry (EI-MS), and single-crystal X-ray diffraction. The thermal properties of the obtained compounds were evaluated by thermogravimetric studies to assess their suitability as precursors for the metal-organic chemical vapour deposition (MOCVD) of Ga2O3 thin films. MOCVD of Ga2O3 thin films was carried out starting from compound 2 in light of the promising features of this precursor. The as-deposited layers are amorphous and can be transformed into the monoclinic beta-Ga2O3 phase upon annealing at 1000 degrees C ex situ. The film morphology was studied by scanning electron microscopy (SEM), and its composition was investigated by energy-dispersive X-ray spectroscopy (EDXS) and X-ray photoelectron spectroscopy (XPS). Almost stoichiometric Ga2O3 thin films with low levels of carbon incorporation were obtained.

• 出版日期2009-3