High-Q (> 5000) AlN nanobeam photonic crystal cavity embedding GaN quantum dots

作者：Sergent S^*; Arita M; Kako S; Iwamoto S; Arakawa Y

来源：Applied Physics Letters, 2012, 100(12): 121103.

DOI：10.1063/1.3695331

• aluminium compounds
• electron beam lithography
• etching
• gallium compounds
• III-V semiconductors
• nanophotonics
• optical design techniques
• optical fabrication
• photoluminescence
• photonic crystals
• Q-factor
• quantum optics
• semiconductor epitaxial layers
• semiconductor quantum dots

We report on the fabrication and optical characterization of high-quality-factor AlN one-dimensional nanobeam photonic crystal cavities embedding GaN quantum dots and operating in the ultra-violet range. By means of electron-beam lithography, dry etching and photoelectrochemical etching, we implement a high-frequency nanobeam cavity design in an AlN epilayer containing GaN quantum dots. Room-temperature microphotoluminescence characterization of the fabricated nanobeams exhibits resonances with wavelengths as short as 320 nm and quality factors as high as Q(exp) = 5.0 x 10(3) at 380 nm. This constitutes a significant improvement over previously reported group-III nitride photonic crystal cavities in terms of operating wavelength.

• 出版日期2012-3-19