Anomalous Peak in the Forward-Bias C-V Plot and Temperature-Dependent Behavior of Au/PVA (Ni,Zn-doped)/n-Si(111) Structures

作者：Tunc Tuncay^*; Altindal Semsettin; Dokme Ilbilge; Uslu Habibe

来源：Journal of Electronic Materials, 2011, 40(2): 157-164.

DOI：10.1007/s11664-010-1440-9

• Anomalous peak
• interface states
• series resistance
• temperature dependence

In this study, the temperature-dependent mean density of interface states (N(SS)) and series resistance (R(S)) profiles of Au/PVA (Ni,Zn-doped)/n-Si(111) structures are determined using current-voltage (I-V) and admittance spectroscopy [capacitance-voltage (C-V) and conductance-voltage G/omega-V] methods. The other main electronic parameters such as zero-bias barrier height (Phi(B0)), ideality factor (n), and doping concentration (N(D)) are also obtained as a function of temperature. Experimental results show that the values of Phi(B0), n, R(S), and N(SS) are strongly temperature dependent. The values of Phi(B0) and R(S) increase with increasing temperature, while those of n and N(SS) decrease. The C-V plots of Au/PVA (Ni,Zn-doped)/n-Si(111) structures exhibit anomalous peaks in forward bias (depletion region) at each temperature, and peak positions shift towards negative bias with increasing temperature. The peak value of C has been found to be strongly dependent on N(SS), R(S), and temperature. The experimental data confirm that the values of N(SS), R(S), temperature, and the thickness and composition of the interfacial polymer layer are important factors that influence the main electrical parameters of the device.

• 出版日期2011-2