Nd1-xFexOF Thin Films Deposited by Chemical Vapor Deposition and Their Arsenic Diffusion

作者：Corrales Mendoza I^*; Conde Gallardo A; Sanchez Resendiz V M

来源：IEEE Transactions on Applied Superconductivity, 2011, 21(3): 2849-2852.

DOI：10.1109/TASC.2010.2084983

• CVD
• diffusion processes
• superconducting films
• superconducting materials

By employing Neodymium-hexafluoro-pentanedionate and Iron-pentanedionate as chemical precursors, we are able to grow (Nd, Fe)O1-yF1+2y thin films by aerosol assisted chemical vapor deposition with different Nd:Fe atomic ratios (Nd1-xFex;0 <= x <= 1). The X-ray diffraction and energy dispersive experiments, indicate that for compositions of x <= 0.5, the as grown films crystallize in the tetragonal off-stoichiometry Nd-oxyfluoride structure (NdO1-yF1+2y, spatial group P4/nmm), while for x > 0.5 the films develop an amorphous phase. Given that we are able to grow films with x approximate to 0.5, the (Nd, Fe)O1-xF1+2y films with this particular Nd/Fe concentration have been employed in diffusion experiments to try to introduce arsenic and develop the NdFeAsO1-yFy. The preliminary results indicate that the arsenic is not efficiently incorporated into the precursor film; however the diffusion promotes the recrystallization of the as grown films in the stoichiometric Nd1-xFexOF rhombohedral phase (spatial group R-3m). The electrical characterization of those films indicates that most of them are semiconductors.

• 出版日期2011-6