Displacement Damage Effects Due to Neutron and Proton Irradiations on CMOS Image Sensors Manufactured in Deep Submicron Technology

作者：Virmontois Cedric^*; Goiffon Vincent; Magnan Pierre; Girard Sylvain; Inguimbert Christophe; Petit Sophie; Rolland Guy; Saint Pe Olivier

来源：IEEE Transactions on Nuclear Science, 2010, 57(6): 3101-3108.

DOI：10.1109/TNS.2010.2085448

• Active pixel sensor (APS)
• CMOS image sensor (CIS)
• displacement damage
• hot pixels
• ionization
• monolithic active pixel sensor (MAPS)
• non-ionizing energy loss (NIEL)

Displacement damage effects due to proton and neutron irradiations of CMOS image sensors dedicated to imaging are presented through the analysis of the dark current behavior in pixel arrays and isolated photodiodes. The mean dark current increase and the dark current nonuniformity are investigated. Dark current histogram observations are compared to damage energy distributions based on GEANT 4 calculations. We also discuss, through annealing analysis, which defects could be responsible for the dark current in CMOS image sensors.

• 出版日期2010-12
• 单位中国地震局