A Nonvolatile InGaZnO Charge-Trapping-Engineered Flash Memory With Good Retention Characteristics

作者：Su Nai Chao^*; Wang Shui Jinn; Chin Albert

来源：IEEE Electron Device Letters, 2010, 31(3): 201-203.

DOI：10.1109/LED.2009.2037986

• Charge-trapping-engineered Flash (CTEF)
• high-kappa
• InGaZnO
• metal-oxide-nitride-oxide-semiconductor (MONOS)
• nonvolatile memory (NVM)

We report an amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor nonvolatile memory (NVM). This NVM shows a large 1.2-V extrapolated ten-year memory window, along with low 10-V/-12-V program/erase voltage, fast 1-ms/100-mu s speed, and good endurance. This was achieved using a charge-trap-engineered structure and high-kappa layers.

• 出版日期2010-3