Memristive switching behavior in Pr0.7Ca0.3MnO3 by incorporating an oxygen-deficient layer

作者：Park Sangsu^*; Jung Seungjae; Siddik Manzar; Jo Minseok; Lee Joonmyoung; Park Jubong; Lee Wootae; Kim Seonghyun; Sadaf Sharif Md; Liu Xinjun; Hwang Hyunsang

来源：Physica Status Solidi-Rapid Research Letters, 2011, 5(10-11): 409-411.

DOI：10.1002/pssr.201105317

• resistance switching
• memristive switching
• Pr0.7Ca0.3MnO3
• X-ray photoelectron spectroscopy

We propose a homogeneous nanoscaled (empty set 250 nm) bilayered Pr0.7Ca0.3MnO3 (PCMO)-based memory device that exhibits low power and good memristive switching behavior. Accurate control of the oxygen-deficient (PCMO3-x) layer thickness promotes oxygen migration between PCMO3-x and stoichiometric PCMO (PCMO3). The bilayered PCMO structure was confirmed by X-ray photoelectron spectroscopy analysis.

• 出版日期2011-11