摘要

In this paper, a differential multi-band CMOS low noise amplifier (LNA), operated in a wide range from 1350 to 2900 MHz, with input matching device, noise cancellation and interference rejection technology, is proposed. Traditional wideband LNAs have poor performances on interference rejection or image rejection. In this design, a multi-band CMOS LNA with matching device noise cancelling, matching device current reuse and source inductance device reuse technologies is proposed, it can improve noise figure, wideband match and interference rejection. There exists a switch-mode notch filter to enhance the interference rejection performance and it does not need additional inductors. A prototype of proposed multi-band CMOS LNA was designed to work at 1450-1490 MHz, 1680-1685 MHz and 2635 HMz-2660 MHz. The simulation results show that the gain is between 18 and 19 dB at L-band application (1450-1685MHz) and between 25.8 and 26.1 dB at CMMB Satellite application (2635 HMz-2660 MHz), the noise figure is 3.1-3.3 dB, and the third-order intercept point (IIP3) is -7 dBm. It consumes 27.35 mW under 1.8 V supply voltage in TSMC 0.18-mu m RF CMOS process.

  • 出版日期2010