High-resolution direct-write patterning using focused ion beams

作者：Ocola Leonidas E^*; Rue Chad; Maas Diederik

来源：MRS Bulletin, 2014, 39(4): 336-341.

DOI：10.1557/mrs.2014.56

• He
• Ne
• Si
• Ga
• microstructure
• nanostructure
• ion-solid interactions
• ion-beam assisted deposition
• ion-implantation
• lithography (removal)
• ion-beam processing

Over the last few years, significant improvements in sources, columns, detectors, control software, and accessories have enabled a wealth of new focused ion beam applications. In addition, modeling has provided many insights into ion-sample interactions and the resultant effects on the sample. With the knowledge gained, the community has found new ion-beam induced chemistries and ion-beam sources, allowing extending nanostructure fabrication and material deposition to smaller dimensions and better control for direct write and patterning. Insignificant proximity effects in resist-based ion beam lithography, combined with the availability of sub-nm ion spot sizes, opens the way to sub-10 nm structures and dense patterns. Additionally, direct-write ion beam nanomachining can process multilevel structures with arbitrary depths in one single process step, with all the information included in a single standard design file, thus enabling fabrication applications not achievable with any other technique.

• 出版日期2014-4