Analytical models for the thermal strain and stress induced by annular through-silicon-via (TSV)

作者：Wang, Fengjuan^*; Zhu, Zhangming; Yang, Yintang; Liu, Xiaoxian; Ding, Ruixue

来源：IEICE Electronics Express, 2013, 10(20): 20130666.

DOI：10.1587/elex.10.20130666

• annular through-silicon-via (TSV)
• thermal strain
• thermal stress
• finite element method (FEM)
• keep-out-zone (KOZ)

Accurate analytical models for the strain and stress in silicon induced by annular Through-silicon-via (TSV) are proposed. Finite element method (FEM) is used for the model verification. It is shown that errors for the strain and stress models are respectively less than 6.6% and 6.8% for various metal and dielectric materials. Based on the analytical model of stress, keep-out-zones (KOZs) are also evaluated for pMOS and nMOS, as the stress is parallel and perpendicular to transistor channel. Annular TSVs with various materials induce KOZs of less than 6.6 mu m. W exhibits the best thermo-mechanical performance with KOZ=0.

• 出版日期2013
• 单位西安电子科技大学