A Broadband Model Over 1-220 GHz for GSG Pad Structures in RF CMOS

作者：Liu, Jun^*; Yu, Zhiping; Sun, Lingling

来源：IEEE Electron Device Letters, 2014, 35(7): 696-698.

DOI：10.1109/LED.2014.2322366

• RF CMOS
• GSG pad structures
• broadband model

A broadband model for ground-signal-ground (GSG) pad structures in RF CMOS is presented. The inductive parasitics of the S- and G-pads are considered. Fringe capacitors are introduced to capture the nonideal capacitive parasitics of the S-pad. A method to analytically extract the model parameters is proposed. The model renders excellent agreement with the measured and simulated data over 1-220 GHz, for a GSG pad structure manufactured in TSMC 90-nm RF CMOS technology.

• 出版日期2014-7
• 单位杭州电子科技大学