摘要
We demonstrate an Al0.52In0.48P homo-junction Separate Absorption Multiplication Avalanche Photodiode as a detector with narrow spectral response in the blue-green part of the optical spectrum. Due to its wide band-gap, this device has a dark current density of %26lt; 8 nA cm(-2) at 99.9% of the breakdown voltage at room temperature. This device has a peak responsivity at 483 nm of 0.15 A/W when punched-through and is capable of an avalanche gain higher than 100.
- 出版日期2014-12