Annealing in tellurium-nitrogen co-doped ZnO films: The roles of intrinsic zinc defects

作者：Tang Kun^*; Gu Ran; Gu Shulin; Ye Jiandong; Zhu Shunming; Yao Zhengrong; Xu Zhonghua; Zheng Youdou

来源：Journal of Applied Physics, 2015, 117(13): 135304.

DOI：10.1063/1.4916785

In this article, the authors have conducted an extensive investigation on the roles of intrinsic zinc defects by annealing of a batch of Te-N co-doped ZnO films. The formation and annihilation of Zn interstitial (Zn-i) clusters have been found in samples with different annealing temperatures. Electrical and Raman measurements have shown that the Zn-i clusters are a significant compensation source to holes, and the Te co-doping has a notable effect on suppressing the Zn-i clusters. Meanwhile, shallow acceptors have been identified in photoluminescence spectra. The N-O-Zn-Te complex, zinc vacancy (V-Zn)-N-O complex, and V-Zn clusters are thought to be the candidates as the shallow acceptors. The evolution of shallow acceptors upon annealing temperature have been also studied. The clustering of V-Zn at high annealing temperature is proposed to be a possible candidate as a stable acceptor in ZnO.

• 出版日期2015-4-7
• 单位南京大学