Fabrication and characterization of diamond gas sensors for detection of semiconductor doping gases

作者：Hayashi K^*; Yokota Y; Tachibana T; Kobashi K; Fukunaga T; Takada T

来源：New Diamond and Frontier Carbon Technology, 2001, 11(2): 101-111.

• diamond film
• gas sensor
• semiconductor doping gas

Solid-state gas sensors were fabricated using diamond films to evaluate their feasibility for detection of semiconductor doping gases, PH3, AsH3, and B2H6. The sensors consisted of double-layered (undoped and B-doped) polycrystalline diamond films with a pair of Pt electrodes. The electrical resistance between the electrodes of the sensors sharply increased over time on exposure to the gases below the alarm-level concentrations of the Japanese standard (0.3 ppm for PH3, 100 ppb for B2H6, and 50 ppb for AsH3). The sensitivities of the devices SI defined as S = (R-g - R-air)/R-air, where R-g and R-air are the resistances between the Pt electrodes before and after exposure to the gases, respectively, were between 10 and 100% for 0.2 ppm PH,. Some sensors exhibited a very high sensitivity that exceeded 100%. The sensitivities were sufficiently high to exclude the interference of 200 ppm ethanol and 1000 ppm hydrogen, which are used at semiconductor manufacturing sites.

• 出版日期2001