Microstructure and Optical Properties of Nano Multilayers of CeO2/ZrO2 and Gd2O3/CeO2 Prepared by Pulsed Laser Deposition

作者：Kuppusami P^*; Balakrishnan G; Mishra Maneesha

来源：Journal of Nanoscience and Nanotechnology, 2016, 16(9): 10069-10079.

DOI：10.1166/jnn.2016.12836

• Nano Multilayers
• Oxides
• Thin Films
• Pulsed Laser Deposition
• X-ray Diffraction
• X-ray Reflectivity
• UV-Visible Spectroscopy

In the present work, the CeO2/ZrO2 and Gd2O3/CeO2 multilayers were deposited on Si(100) and quartz substrates by pulsed laser deposition and microstructural changes and optical properties of these multilayers are investigated. While depositing CeO2/ZrO2 multilayers, CeO2 layer thickness was kept constant at 10 nm, and ZrO2 layer thickness was varied as 30, 20 and 10 nm. The XRD results of the multilayer of CeO2/ZrO2 showed the formation of tetragonal ZrO2 at room temperature, irrespective of the ZrO2 layer thickness. The optical studies of the multilayer films showed that the refractive index of the films increased from 1.86 to 2.18 as ZrO2 layer thickness increased from 10 nm to 30 nm. The band gap of ZrO2 increased from 4.92 eV to 5.0 eV with decreasing zirconia layer thickness from 30 to 10 nm. In the case of Gd2O3/CeO2 multilayers, CeO2 layer thickness was varied from 5 to 30 nm, while the layer thickness of Gd2O3 was kept constant (10 nm). The Gd2O3/CeO2 multilayers were found to be polycrystalline at room temperature. The band gap of the Gd2O3 increased with increase in the deposition temperature. The layer thickness of CeO2 showed opposing trend for the multilayers grown at 300 K and 873 K. The band gap of Gd2O3 increased with increase in layer thickness of the CeO2 for the multilayer deposited at 873 K, whereas it decreased for the multilayers deposited at 300 K.

• 出版日期2016-9