Analysis of whisker growth on a surface of revolution

作者：Yang, Fuqian^*; Shi, Yu

来源：Physics Letters, Section A: General, Atomic and Solid State Physics , 2017, 381(34): 2767-2771.

DOI：10.1016/j.physleta.2017.06.050

• Whisker growth
• Grain boundary diffusion
• Growth rate
• Stress relaxation

A general mass transport equation for diffusion-controlled whisker growth on a surface of revolution is formulated. Two limiting cases for the whisker growth of a circular cylinder-like whisker are analyzed; one surface is planner, and the other one is spherical. The growth rate is proportional to the concentration difference for the growth of the whisker on both the planar surface and the spherical surface. Using the relation between mechanical work and chemical energy, the growth rate is found to be proportional to the pressure difference. Assuming the whisker growth as the mechanism for stress relaxation of a thin film, the whisker length and the stress relaxation associated with the whisker growth are found to be exponential functions of time.

• 出版日期2017-9-12
• 单位兰州理工大学