科研之友
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摘要
We demonstrate compact, broadband, ultralow loss silicon waveguide crossings operating at 1550 nm and 1310 nm. Cross-wafer measurement of 30 dies shows transmission insertion loss of - 0.028 +/- 0.009 dB for the 1550 nm device and - 0.017 +/- 0.005 dB for the 1310 nm device. Both crossings show crosstalk lower than - 37 dB. The devices were fabricated in a CMOS-compatible process using 248 nm optical lithography with a single etch step.
- 出版日期2013-12-2
