Resistive Switching Multistate Nonvolatile Memory Effects in a Single Cobalt Oxide Nanowire

作者：Nagashima Kazuki; Yanagida Takeshi^*; Oka Keisuke; Taniguchi Masateru; Kawai Tomoji; Kim Jin Soo; Park Bae Ho

来源：Nano Letters, 2010, 10(4): 1359-1363.

DOI：10.1021/nl9042906

• Resistive switching
• nonvolatile memory
• nanowires
• cobalt oxides
• multistate memory

A multistate nonvolatile memory operated at sublithographic scale has been strongly desired since other nonvolatile memories have confronted the fundamental size limits owing to their working principles. Resistive switching (RS) in metal-oxide-metal junctions, so-called ReRAM, is promising for next generation high-density nonvolatile memory. Self-assembled oxide nanowire-based RS offers an attractive solution not only to reduce the device size beyond the limitation of current lithographic length scales but also to extract the underlying nanoscale RS mechanisms. Here we demonstrate the multistate bipolar RS of a single Co(3)O(4) nanowire (10 nm scale) with the endurance up to 10(8). In addition, we succeeded to extract a voltage-induced nanoscale RS mechanism rather than current-induced RS. These Findings would open up opportunities to explore not only for the intrinsic nanoscale RS mechanisms with the ultimate size limit but also for next generation multistate three-dimensional ReRAM.

• 出版日期2010-4