A Continuous Compact DC Model for Dual-Independent-Gate FinFETs

作者：Hasan Mehdi; Gaillardon Pierre Emmanuel; Sensale Rodriguez Berardi^*

来源：IEEE Journal of the Electron Devices Society, 2017, 5(1): 23-31.

DOI：10.1109/JEDS.2016.2632709

• Compact model
• FinFET
• Schottky barrier
• steep subthreshold slope
• impact ionization
• feedback

Multiple-independent-gate (MIG) silicon FinFETs were recently shown capable of enabling: 1) device-level polarity control; 2) dynamic threshold modulation; and 3) subthreshold slope tuning down to ultra-steep-slope operation. These operation mechanisms can unlock a myriad of opportunities in digital as well as analog design. Here we discuss a continuous compact direct-current (dc) model, capable of describing the current-voltage characteristics of a class of MIG FinFETS, namely dual-independent-gate (DIG) FinFETs, over all its biasing design space. This model captures some of the unique features of DIG FinFETs including the dependence of its super-steep subthreshold swing on drain bias and polarity gate bias. An excellent agreement is shown between the model and measured experimental current-voltage characteristics in these devices. Moreover, the predictive nature of the model is evaluated by foreseeing the perspectives of DIG FinFETs as efficient RF detectors at very high frequencies.

• 出版日期2017-1