A novel adder cell for ultra low voltage, ultra low power networks in nanoscale VLSI circuits

作者：Karimi Gholamreza^*; Sadeghi Omid

来源：IEICE Electronics Express, 2011, 8(7): 478-483.

DOI：10.1587/elex.8.478

• 32 nm CMOS
• 8x8 bit multiplier
• BSIM4
• full-adder
• ultra-low-voltage

A novel full adder cell is designed so that it can overcome the challenges of circuit design in deep submicron (DSM) technology. The proposed adder cell utilizes multiplexing control input techniques (MCIT) for the sum operation and uses a new arrangement of pass transistors for carry operation. The adder is then used in an 8x8 bit Braun-array multiplier to show its performance. The layout of multiplier is simulated in 32 nm CMOS technology by Microwind31 (MW31) VLSI CAD TOOL. Simulated results show that our circuit operates properly in nanoscale and has a very small area.

• 出版日期2011-4-10