Accurate Analytical Physical Modeling of Amorphous InGaZnO Thin-Film Transistors Accounting for Trapped and Free Charges

作者：Ghittorelli Matteo^*; Torricelli Fabrizio; Colalongo Luigi; Kovacs Vajna Zsolt Miklos

来源：IEEE Transactions on Electron Devices, 2014, 61(12): 4105-4112.

DOI：10.1109/TED.2014.2361062

• Computer-aided design (CAD) applications
• indium gallium zinc oxide (IGZO)
• thin-film transistor (TFT)

A physical-based and analytical drain current model of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) is proposed. The model considers the combined contribution of both trapped and free charges that move through the a-IGZO film by multiple-trapping-and-release and percolation in conduction band. The model is compared with both measurements of TFTs fabricated on a flexible substrate and numerical simulations. It is accurate in the whole range of a-IGZO TFTs operation. The model requires only physical and geometrical device parameters. The resulting mathematical expressions are suitable for computer-aided design implementation and yield the material physical parameters that are essential for process characterization.

• 出版日期2014-12