A simplified compact model of miniaturized cross-shaped CMOS integrated Hall devices

作者：Huang Haiyun~ Wang Dejun~ Li Wenbo Xu Yue Qin Huibin and Hu Yongcai School of Electronic Science and Technology Faculty of Electronic Information and Electronic Engineering Dalian University of Technology Dalian China Institute of New Electron Devices Hangzhou Dianzhi University Hangzhou China College of Electronic Science & Engineering Nanjing University of Posts and Telecommunications Nanjing China

来源：半导体学报, 2012, (08): 60-66.

• miniaturized Hall device
• compact model
• lateral diffusion
• junction field effect

<正>A simplified compact model for a miniaturized cross-shaped CMOS integrated Hall device is presented. The model has a simple circuit structure,only consisting of a passive network with eight non-linear resistors and four current-controlled voltage sources.It completely considers the following effects:non-linear conductivity,geometry dependence of sensitivity,temperature drift,lateral diffusion,and junction field effect.The model has been implemented in Verilog-A hardware description language and was successfully performed in a Cadence Spectre simulator.The simulation results are in good accordance with the classic experimental results reported in the literature.

• 出版日期2012-8-15
• 单位南京邮电大学