AlInGaN Metal-Insulator-Semiconductor Photodetectors at UV-C 280 nm

作者：Lee H C^*; Su Y K; Lin J C; Cheng Y C; Wu S L; Jhou Y D

来源：Electrochemical and Solid-State Letters, 2009, 12(10): H357-H360.

DOI：10.1149/1.3182808

Aluminum indium gallium nitride (AlInGaN) UV-C 190-280 nm metal-insulator-semiconductor photodetectors (PDs) have been fabricated by using a SiO(2) insulating layer. Unlike the AlGaN/GaN heterostructure PDs operated at 280 nm, the use of an AlInGaN/GaN structure should cause less stress and reduce the degree of lattice mismatch by 1.6%. The dark current of PDs with an insulating layer was much smaller than that of PDs without an insulating layer, which can be attributed to the increasing surface barrier height and the decreasing density of the interface states between the metal and the semiconductor.

• 出版日期2009