摘要

Antimony selenide (Sb2Se3) has many potential applications in photoelectric devices, thermoelectric cooling devices and electrochemical devices etc. It also has many special properties due to its layered structure. A simple hydrothermal method was used to synthesize Sb2Se3 nanowires of high crystalline quality. (Sb4Se6)(n) layers are parallel to the growth direction of the Sb2Se3 nanowire. A single Sb2Se3 nanowire demonstrated a remarkable response to 635 nm light at 10 V with the responsivity and external quantum efficiency of 360 A W-1 and 7.0 x 10(4)%, respectively. The rise/fall time was 0.4/1.3 s. Flexible photodetectors were fabricated by dispersing a large number of Sb2Se3 nanowires onto the Au interdigitated electrodes on PET substrates, which showed a fast response speed with the rise/fall time as low as 13/20 ms and excellent flexibility. The high-performance of the photodetectors may be partially attributed to the layered structure. Generally, high-yield Sb2Se3 nanowires synthesized by the hydrothermal method are promising candidates for high-performance flexible photodetectors.