科研之友
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摘要
Titanium dioxide thin films are extensively studied for applications in solid state gas sensor devices. Their gas sensing properties are strongly dependent on deposition technique, annealing temperature, film thickness and consequent properties like crystalline structure, grain size or amount of defects and impurities. In this work we report the gas sensing properties of TiO2 thin films prepared by reactive magnetron sputtering technique and subsequently annealed at temperatures 600A degrees C and 900A degrees C. The films were exposed to different concentrations of H-2 gas up to 10 000 ppm. Their sensitivity to gas at various operating temperatures, ranging from 250A degrees C to 450A degrees C, was obtained by measuring their resistance.
- 出版日期2011-10
