Dual-purpose BGaN layers on performance of nitride-based high electron mobility transistors

作者：Ravindran Vinod^*; Boucherit Mohamed; Soltani Ali; Gautier Simon; Moudakir Tarik; Dickerson Jeramy; Voss Paul L; di Forte Poisson Marie Antoinette; de Jaeger Jean Claude; Ougazzaden Abdallah

来源：Applied Physics Letters, 2012, 100(24): 243503.

DOI：10.1063/1.4729154

A GaN/ultrathin BGaN/GaN heterojunction is used in AlGaN/GaN high electron mobility transistors (HEMTs) to provide an electrostatic barrier to electrons and to improve the confinement of the 2-dimensional electron gas. BGaN back-barrier layers limit leakage in the GaN buffer thanks to two effects: a polarization-induced band discontinuity and a resistive barrier originating from excellent insulation properties of BGaN. Compared to conventional AlGaN/GaN HEMTs, structures grown with BGaN back-barrier showed a significant improvement of static performances, transport properties, and trapping effects involving a limited current collapse in dynamic regime. A DC maximum current increase of 58.7% was observed.

• 出版日期2012-6-11