Multiple Trench Split-gate SOI LDMOS Integrated With Schottky Rectifier

作者：Wang, Ying; Liu, Yan-juan; Wang, Yi-Fan; Yu, Cheng-hao; Cao, Fei; Hu, Yue; Wang, Gaofeng

来源：IEEE Transactions on Electron Devices, 2017, 64(7): 3028-3031.

DOI：10.1109/TED.2017.2704089

• Breakdown voltage (BV)
• reverse recovery time
• Schottky rectifier
• silicon-on-insulator (SOI)
• specific on-state resistance (R-ON,R-sp)

In this paper, a multiple trench split-gate silicon-on-insulator (SOI) lateral double-diffused MOSFET with a Schottky rectifier (MTS-SG-LDMOS) is proposed and its characteristics are studied using 2-D simulations. The new structure features double oxide trenches, a floating polysilicon split-gate, and a Schottky rectifier. Each oxide trench includes a vertical field plate which enhances the depletion of the drift region and modulates the bulk electric field. As the simulation results, when compared to the conventional SOI LDMOS (C-LDMOS), the breakdown voltage in the MTS-SG-LDMOS increases from 297 to 350V, the specific on-state resistance (R-ON,R-sp) decreases from 142.9 to 48.2 m.cm(2), and the gate-drain charge (Q(gd)) decreases from 19 to 9 pC. Moreover, the reverse recovery time of the proposed structure shows a 73.6% reduction as compared to the C-LDMOS device.

• 出版日期2017-7
• 单位哈尔滨工程大学; 杭州电子科技大学