A high performance In0.53Ga0.47As metal-oxide-semiconductor field effect transistor with silicon interface passivation layer

作者：Zhu Feng^*; Zhao Han; Ok I; Kim H S; Yum J; Lee Jack C; Goel Niti; Tsai W; Gaspe C K; Santos M B

来源：Applied Physics Letters, 2009, 94(1): 013511.

DOI：10.1063/1.3068752

• elemental semiconductors
• gallium arsenide
• hafnium compounds
• III-V semiconductors
• indium compounds
• MOSFET
• passivation
• silicon

In this letter, we demonstrate a high performance In0.53Ga0.47As channel n-type metal-oxide-semiconductor field effect transistor with silicon interface passivation layer (IPL) and HfO2 gate oxide. Owing to the effectiveness of Si IPL on improving the interface quality, good device characteristics have been obtained, including the peak transconductance of 7.7 mS/mm (L-g=5 mu m and V-d=50 mV), drive current of 158 mA/mm (L-g=5 mu m, V-gs=V-th 2 V, and V-d=2.5 V), and the peak effective channel mobility of 1034 cm(2)/V s. As an important factor on device design, the impact of silicon IPL thickness on the transistor characteristics has been investigated.

• 出版日期2009-1-5