A Thermally-Reliable, Low-Resistivity Cu(Ir) and Cu(IrN) Alloy Films for Barrierless Cu Metallization

作者：Lin Chon Hsin^*

来源：Japanese Journal of Applied Physics, 2012, 51(5): 05EA05.

DOI：10.1143/JJAP.51.05EA05

In this study, copper (Cu) alloy films developed by reactive co-sputtering of Cu with iridium (Ir) in an Ar/N-2 atmosphere to render Cu(Ir) and Cu(IrNx) seed layers on barrierless Si substrates are found to exhibit great thermal stability, low resistivity, and a good adhesion feature. The Cu(Ir) and Cu(IrNx) films are annealed at 650 and 730 degrees C for 1 h, displaying good thermal stability with low leakage current for the latter and low resistivity values of 4.32 and 2.67 mu Omega cm, respectively; no copper silicide formation occurs at the Cu-Si interface. The IrNx's thermal stability and low resistivity reveal that the Cu(IrNx) is a good candidate for advanced barrierless metallization in forming a new type of interconnect for electronic components, such as capacitors.

• 出版日期2012-5