Metallic Schottky barrier source/drain nanowire transistors using low temperature microwave annealed nickel, ytterbium, and titanium silicidation

作者：Shih Chun Hsing^*; Huang Ming Kun; Tsai Jr Jie; Chen Yu Hsuan; Wu Wen Fa

来源：Materials Science in Semiconductor Processing, 2017, 70: 272-278.

DOI：10.1016/j.mssp.2016.11.010

• Schottky barrier
• Microwave annealing
• Nanowire transistors
• Metal silicidation
• Dopant segregation

This work presents the formation of intrinsic and dopant-segregated Schottky barrier nanowire transistors using microwave-annealed silicidation. To gain a sound understanding of applying the microwave annealing on fabricating metallic source/drain nanowire devices, three metals, nickel, ytterbium, and titanium, were utilized to form the Schottky barrier source/drain. Effects of microwave annealing on silicidation as well as segregation were intensively examined by comparing with those using rapid-thermal annealing. The drain current of ytterbium-based examples depend mildly on the applied microwave power from 200-400%, whereas the higher 300% or 400% power is most appropriate to optimize nickel-based nanowire transistors. The maximum 500% power is required on forming titanium silicidation for intrinsic or dopant-segregated nanowire devices. Relatively, temperature of 600 degrees C is required to form the nanowire source/drain with nickel or ytterbium, and temperature of 900 degrees C is needed for titanium-based devices. Experimental results show that the microwave annealing offers low-temperature processing against the rapid-thermal method to ensure favorable device characteristics, serving as a promising approach for 3D integration of CMOS technologies.

• 出版日期2017-11-1
• 单位中国科学院电工研究所; 清华大学